ORDERED VACANCY COMPOUND CUIN3SE5 ON GAAS (100) - EPITAXIAL-GROWTH AND CHARACTERIZATION

Epitaxial growth of the ordered vacancy compound CuIn3Se5 has been ach ieved on GaAs (100) by molecular beam epitaxy from Cu2Se and In2Se3 so urces. Electron probe microanalysis and x-ray diffraction have confirm ed the composition for the 1-3-5 phase and that the films are single-c rystal CuIn3Se5 (100). Transmission electron microscopy characterizati on of the material also showed it to be single crystalline. Structural defects in the layer consisted mainly of stacking faults. Photolumine scence measurements performed at 7.5 K indicate that the band gap is 1 .28 eV Raman spectra reveal a strong polarized peak at 152 cm-1, which is believed to arise from the totally symmetric vibration of the Se a toms in the lattice.