SIMULATIONS FOR THE HIGH-SPEED RESPONSE OF GAN METAL-SEMICONDUCTOR-METAL PHOTODETECTORS

Results of our Monte Carlo computations for the dynamic response of Ga N photodetectors are reported. Electron and hole transport, circuit lo ading, electric field effects, and the intensity dependence are all co mprehensively included. The impulse transient compares favorably with a 0.25 mum GaAs metal-semiconductor-metal device. The performance is b etter at lower photoexcitation intensities, and improvements for highe r intensities are possible by increasing the applied voltage and opera ting in the ballistic regime at electric fields around 150 kV/cm.