GAP-STATE MEASUREMENTS ON DIAMOND-LIKE CARBON-FILMS

Authors
MANDEL T FRISCHHOLZ M HELBIG R HAMMERSCHMIDT A
Citation
T. Mandel et al., GAP-STATE MEASUREMENTS ON DIAMOND-LIKE CARBON-FILMS, Applied physics letters, 64(26), 1994, pp. 3637-3639
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
26
Year of publication
1994
Pages
3637 - 3639
Database
ISI
SICI code
0003-6951(1994)64:26<3637:GMODC>2.0.ZU;2-6
Abstract
A high frequency capacitance-voltage method is used to measure the ele ctronic gap-state density in diamond-like carbon (DLC) films. The gap- state density is derived from the analysis of high frequency capacitan ce-voltage characteristics of DLC on crystalline silicon (c-Si) hetero junctions. Near the Fermi level the gap-state density in the DLC thin film is obtained of the order 10(16) cm-3 eV-1. Furthermore, the energ y-band diagram of a DLC/c-Si heterojunction is evaluated, and the work function of DLC is derived to be 3.6 eV