NOVEL RESONANT-TUNNELING TRANSISTOR WITH HIGH TRANSCONDUCTANCE AT ROOM-TEMPERATURE

A resonant tunneling transistor (RTT) utilizing a novel heterodimensio nal Schottky gate technology is described. The gate is formed by elect roplating Pt/Au onto the side of an AlGaAs/GaAs double barrier structu re. The gate voltage modulates the drain current by modulating the are a of the quasi-two dimensional electron accumulation layer which forms above the source barrier under drain-source bias. Room temperature tr ansistor characteristics included a peak current of 225 mA/mm and peak transconductance of 218 mS/mm. The ultrafine fabrication process is a lso discussed.