NOISE PERFORMANCE OF LOW-POWER 0.25 MICRON GATE ION-IMPLANTED D-MODE GAAS-MESFET FOR WIRELESS APPLICATIONS

Authors
APOSTOLAKIS PJ MIDDLETON JR SCHERRER D FENG M LEPORE AN
Citation
Pj. Apostolakis et al., NOISE PERFORMANCE OF LOW-POWER 0.25 MICRON GATE ION-IMPLANTED D-MODE GAAS-MESFET FOR WIRELESS APPLICATIONS, IEEE electron device letters, 15(7), 1994, pp. 239-241
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
15
Issue
7
Year of publication
1994
Pages
239 - 241
Database
ISI
SICI code
0741-3106(1994)15:7<239:NPOL0M>2.0.ZU;2-J
Abstract
We report on the noise performance of low power 0.25 mum gate ion impl anted D-mode GaAs MESFETs suitable for wireless personal communication applications. The 0.25 mum x 200 mum D-mode MESFET has a f(t) of 18 G Hz and f(max) of 33 GHz at a power level of 1 mW (power density of 5 m W/mm). The noise characteristics at 4 GHz for the D-mode MESFET are F( min) = 0.65 dB and G(assoc) = 13 dB at 1 mW. These results demonstrate that the GaAs D-mode MESFET is also an excellent choice for low power personal communication applications.