SULFIDE TREATED GAAS MISFETS WITH GATE INSULATOR OF PHOTO-CVD GROWN P3N5 FILM

Authors
JEONG YH CHOI KH JO SK
Citation
Yh. Jeong et al., SULFIDE TREATED GAAS MISFETS WITH GATE INSULATOR OF PHOTO-CVD GROWN P3N5 FILM, IEEE electron device letters, 15(7), 1994, pp. 251-253
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
15
Issue
7
Year of publication
1994
Pages
251 - 253
Database
ISI
SICI code
0741-3106(1994)15:7<251:STGMWG>2.0.ZU;2-W
Abstract
Sulfide passivated GaAs MISFET's with the gate insulator of photo-CVD grown P3N5, films have been successfully fabricated. The device shows the drain current instability less than 22% for the period of 1.0 s ap proximately 1.0 X 10(4) s, due to excellent properties of sulfide trea ted P3N5/GaAs interrace. The effective electron mobility and extrinsic transconductance of the device are about 1300 cm2/V . sec and 133 mS, respectively, at room temperature. To estimate the effects of sulfide treatment on P3N5/GaAs interfacial properties, GaAs-MIS diodes are al so fabricated.