APPLICATION OF THE DIFFERENCE SUBTHRESHOLD SWING ANALYSIS TO STUDY GENERATION INTERFACE-TRAP IN MOS STRUCTURES DUE TO FOWLER-NORDHEIM AGING

A new technique, the Difference Subthreshold Swing Analysis (DSSA), is presented for characterizing the generation of interface traps in MOS structures during Fowler-Nordheim tunneling. Peaks in difference subt hreshold swing relaxation defined as a function of the electron fluenc e yield generation cross sections and the densities of generated inter face traps. The simple mathematical theorem, on which our measurements depend, has been proven experimentally. This technique has the advant age of being direct, fast and convenient; it is appropriate for the st udy of complex interface trap generation phenomena. The experiment sho ws that the interface traps generated consist of two kinds with differ ent generation cross sections under high field stresses.