STUDY OF TEST STRUCTURES OF A MOLECULAR MEMORY-ELEMENT

Authors
KRIGER YG YUDANOV NF IGUMENOV IK VASHCHENKO SB
Citation
Yg. Kriger et al., STUDY OF TEST STRUCTURES OF A MOLECULAR MEMORY-ELEMENT, Journal of structural chemistry, 34(6), 1993, pp. 966-970
Citations number
7
Categorie Soggetti
Chemistry Inorganic & Nuclear","Chemistry Physical
Journal title
Journal of structural chemistry → ACNP
ISSN journal
00224766
Volume
34
Issue
6
Year of publication
1993
Pages
966 - 970
Database
ISI
SICI code
0022-4766(1993)34:6<966:SOTSOA>2.0.ZU;2-J
Abstract
Electrophysical parameters of a molecular memory element were measured . It was established that it has an S-shaped voltage-current character istic with memory Information recording/erasure parameters were measur ed. For some elements, 10 nsec recording times with an information sto rage time of 1.5 months were obtained. The number of recording/erasure cycles exceeded 10(8). A conclusion is drawn that the design of stora ge devices based on a molecular memory element is promising.