BALLISTIC TRANSPORT THROUGH THE FLUCTUATION POTENTIAL - STRONG ONE-DIMENSIONAL QUANTIZATION IN 2-DIMENSIONAL GAAS ALGAAS STRUCTURES/

Authors
ORLOV AO SAVCHENKO AK RYLIK AS MALAKHOV BA SINEV NA
Citation
Ao. Orlov et al., BALLISTIC TRANSPORT THROUGH THE FLUCTUATION POTENTIAL - STRONG ONE-DIMENSIONAL QUANTIZATION IN 2-DIMENSIONAL GAAS ALGAAS STRUCTURES/, Journal of physics. Condensed matter, 6(26), 1994, pp. 120000349-120000354
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
Journal of physics. Condensed matter → ACNP
ISSN journal
09538984
Volume
6
Issue
26
Year of publication
1994
Pages
120000349 - 120000354
Database
ISI
SICI code
0953-8984(1994)6:26<120000349:BTTTFP>2.0.ZU;2-S
Abstract
We have observed the 2e2/h conductance quantization with varying elect ron concentration in GaAs-GaAlAs heterostructures with continuous (i.e . with no split) gates. The effect of the 1D quantization in 2D struct ures is explained as being due to the ballistic transport through an i ntrinsic constriction formed by random potential fluctuations in the s hort conducting channel. The separation between 1D subbands, up to 18 meV, is larger than that revealed so far in split-gated structures all owing the conductance quantization to be tracked up to 50 K.