THE BIAS-TEMPERATURE EFFECT IN A RECTIFYING NB C60/P-SI STRUCTURE - EVIDENCE FOR MOBILE NEGATIVE CHARGES IN THE SOLID C60 FILM/

Authors
CHEN KM JIA YQ JIN SX WU K ZHANG XD ZHAO WB LI CY GU ZN
Citation
Km. Chen et al., THE BIAS-TEMPERATURE EFFECT IN A RECTIFYING NB C60/P-SI STRUCTURE - EVIDENCE FOR MOBILE NEGATIVE CHARGES IN THE SOLID C60 FILM/, Journal of physics. Condensed matter, 6(27), 1994, pp. 120000367-120000372
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Journal of physics. Condensed matter → ACNP
ISSN journal
09538984
Volume
6
Issue
27
Year of publication
1994
Pages
120000367 - 120000372
Database
ISI
SICI code
0953-8984(1994)6:27<120000367:TBEIAR>2.0.ZU;2-W
Abstract
Solid C60 film was grown on a p-type Si substrate and a rectifying Nb/ C60/p-Si structure was prepared. Capacitance-voltage (C-V) measurement s showed that for tem above 260 K the C-V curve of the Nb/Co60/p-Si st ructure shifted along the voltage axis depending on biasing conditions . We analysed this effect to reveal the existence of mobile negative c harges in the C60 layer and determine the density of the mobile charge s.