MAGNETIC-FIELD DEPENDENCE OF LOW-TEMPERATURE MOBILITY IN QUASI-ONE-DIMENSIONAL ELECTRON-SYSTEMS

We study the mobility of a quasi-one-dimensional (Q1D) electron system in the presence of an axial magnetic field low temperatures. We consi der the mobility limits for remote-impurity scattering, homogeneous-ba ckground scattering, interface-roughness scattering, and alloy-disorde r scattering mechanisms. For a system in which all carriers are in the lowest subband, the electron-impurity interaction is modelled for die above cases, and analytic expressions are derived. Calculations appro priate for a GaAs Q1D structure are presented for typical wire radius R, electron density N, impurity density N(i), and applied magnetic fie ld B.