THE EFFECT OF ELECTRODE COMPOSITION ON RF MAGNETRON SPUTTERING DEPOSITION OF PB[(MG1 3NB2/3)0.7TI0.3]O3 FILMS/

Ferroelectric Pb[(Mg1/3Nb2/3)0.7Ti0.3]O3 (abbreviated PMNT) thin films were prepared on silicon substrates by rf magnetron sputtering deposi tion with PbO-enriched PMNT targets. The effects of electrode composit ion and thin film growth conditions were investigated with grazing-inc idence x-ray diffraction, secondary ion mass spectrometry, and scannin g electron microscopy. The dielectric property of perovskite films was also measured. The usage of a Pt/Ti electrode was observed to enhance the formation of perovskite PMNT films; in addition, the TiO2 rutile phase was formed at the interface between the PMNT film and Pt electro de due to the oxidation of out-diffused Ti atoms from the inner Ti ele ctrode. It was then noticed that if a target containing a larger exces s of PbO was used, a higher consumption of TiO2 occurred and more pero vskite phase would be formed in the deposited films. Consequently, per ovskite PMNT films having a uniform microstructure and satisfactory di electric property close to the bulk value were obtained by rf magnetro n sputtering deposition on the Pt/Ti/SiO2/Si substrate at 640-degrees- C under appropriate working conditions.