C. Tserbak et G. Theodorou, OPTICAL-ABSORPTION OF STRAIN-SYMMETRIZED (SI)N (GE)10-N SUPERLATTICES/, Semiconductor science and technology, 9(7), 1994, pp. 1363-1365
Calculations of the optical absorption of short-period strain-symmetri
zed (Si)n/(Ge)10-n superlattices, with n = 3-7, are presented. The cal
culations are based on an empirical tight-binding model in the three-c
entre representation, which includes third-neighbour and spin-orbit in
teractions. These strained-layer superlattices (SLS) exhibit a direct
gap. Their absorption coefficient, alpha(omega), is evaluated close to
the bandgap, taking into account only direct transitions. The influen
ce of the symmetry, the lattice constant in the growth plane and the c
omposition of the SLS on the absorption coefficient is examined. It is
found that among these materials the most appropriate for use in devi
ces, such as receivers, is the strain-symmetrized (Si)4/(Ge)6 SLS.