HYDROGEN-RELATED LUMINESCENCE-CENTERS IN THERMALLY TREATED CZOCHRALSKI SILICON

The I-line (0.9650 eV), T-line (0.9351 eV) and several other luminesce nce centres created by annealing Czochralski silicon at 450-degrees-C are all shown to incorporate one hydrogen atom, from observed deuteriu m-hydrogen isotope structure, and mainly one carbon atom deduced from carbon isotope structure. It is also demonstrated that hydrogen is a c ommon contaminant in silicon and that it can be readily introduced by thermal treatments at 450-degrees-C in the presence of water vapour or gaseous hydrogen. With increasing hydrogen content, the luminescence from the centres decreases, implying that if more than one hydrogen at om is captured by a centre it becomes optically inactive.