AN INFRARED LATERAL HOT-ELECTRON PHOTOTRANSISTOR

A lateral hot-electron phototransistor (LHEPT) utilizing intersubband absorption of radiation is proposed and considered theoretically. The principle of operation of the LHEPT is associated with two-dimensional or quasi-one-dimensional electron gas heating due to absorption of ra diation in the base. The photoelectric performance of the LHEPT is eva luated using the proposed model. It is shown that the LHEPT exhibits h igh responsivity owing to high-efficiency near-ballistic hot-electron transport in the LHEPT base and weak electron energy relaxation at low temperatures. LHEPTS can be used for detection of infrared radiation as tunable photodetectors.