EMISSION AT 1.3-MU-M FROM DYSPROSIUM-DOPED GALAS GLASS

Authors
HEWAK DW SAMSON BN NETO JAM LAMING RI PAYNE DN
Citation
Dw. Hewak et al., EMISSION AT 1.3-MU-M FROM DYSPROSIUM-DOPED GALAS GLASS, Electronics Letters, 30(12), 1994, pp. 968-970
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
12
Year of publication
1994
Pages
968 - 970
Database
ISI
SICI code
0013-5194(1994)30:12<968:EA1FDG>2.0.ZU;2-F
Abstract
The potential for optical amplification at 1.3mum is demonstrated in a dysprosium-doped gallium-lanthanum-sulphide based glass. Lifetimes of 59mus are observed for the H-6(9/2)-H-6(15/2) transition for which th e emission peaks at 1.32mum. A radiative lifetime of 203mus is calcula ted by a Judd-Ofelt analysis, indicating a total radiative quantum eff iciency of 29%. A pump absorption cross-section 20 times greater than Pr3+ suggests that shorter fibre devices may be possible.