STARK-EFFECT NEAR THE TYPE-I-TYPE-II TRANSITION POINT IN SEMICONDUCTOR QUANTUM-WELLS

Citation
Av. Kavokin et Ai. Nesvizhskii, STARK-EFFECT NEAR THE TYPE-I-TYPE-II TRANSITION POINT IN SEMICONDUCTOR QUANTUM-WELLS, Physical review. B, Condensed matter, 49(24), 1994, pp. 17055-17058
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
49
Issue
24
Year of publication
1994
Pages
17055 - 17058
Database
ISI
SICI code
0163-1829(1994)49:24<17055:SNTTTP>2.0.ZU;2-R
Abstract
We show the effect of an electric field normal to the quantum-well (QW ) plane on the shape of a hole wave function in the vicinity of the ty pe-I-type-II transition point, which leads to (i) the strong decrease of the oscillator strength of e1h1, e1h3 exciton states, and (ii) an i ncrease in the strength of the e1h2 transition, which is forbidden in the absence of the field. The variational calculation of the hole wave function in a type-II QW reveals the existence of some critical elect ric field which initiates a shift of the hole center of mass to one of the interfaces.