We have studied the photoresponses of poly(para-phenylene vinylene) (P
PV) light-emitting diodes (LED's) with PPV derivatives sandwiched betw
een indium tin oxide (ITO) and metals including calcium, aluminum, and
copper. Under illumination all diodes exhibit relatively large photoc
onductive I(V) responses which cross the dark I(V) curve at a forward-
bias voltage V0 that scales with the difference in work functions betw
een the ITO and metal electrodes. This causes the open-circuit voltage
to saturate easily at V0 and consequently to be temperature independe
nt, in contrast to the properties of the photovoltaic effect exhibited
by conventional Schottky-barrier-type photodiodes. We have also found
a dramatic, large enhancement in the electroluminescence intensity of
the illuminated LED's which correlates with the photocurrent.