DC CHARACTERISTICS OF GATE-ALL-AROUND (GAA) SILICON-ON-INSULATOR MOSFETS AT CRYOGENIC TEMPERATURES

This paper describes the static I-V characteristics at cryogenic tempe ratures (77 K and 4.2 K) of so-called dual-gate Silicon-on-Insulator ( SOI) MOSFETs, fabricated in the Gate-all-Around (GAA) technology. The n-channel devices are characterised by an increase of the threshold vo ltage and die transconductance upon cooling, which is observed both fo r the edge-channel component and for the primary drain current. It is shown that the devices suffer less from the hysteresis and transient e ffects, which have been reported before in standard SOI transistors. F or the first time, the occurrence of the back-gate induced Multistable -Charge-Controlled-Memory (MCCM) effect in GAA devices is demonstrated at 4.2 K. The p-channel devices on the other hand show specific insta bilities at deep cryogenic temperatures, which are related to the unex pected reduction of \V(T)\.