This paper describes the cryogenic operation of partially depleted Sil
icon-On-Insulator inverters. As is shown, the floating operation yield
s a degradation of the transfer characteristics, which increases upon
cooling. Additionally, at cryogenic temperatures, hysteresis effects,
further deteriorate the performance. These observations will be discus
sed in view of the cryogenic SOI MOSFET characteristics and anomalies.
Finally, the impact of the so-called twin-gate configuration on the i
mprovement of the inverter characteristics at low temperatures will be
demonstrated and discussed.