LOW-TEMPERATURE OPERATION OF SILICON-ON-INSULATOR INVERTERS

Authors
Citation
E. Simoen et C. Claeys, LOW-TEMPERATURE OPERATION OF SILICON-ON-INSULATOR INVERTERS, Journal de physique. IV, 4(C6), 1994, pp. 63-68
Citations number
10
Categorie Soggetti
Physics
Journal title
ISSN journal
11554339
Volume
4
Issue
C6
Year of publication
1994
Pages
63 - 68
Database
ISI
SICI code
1155-4339(1994)4:C6<63:LOOSI>2.0.ZU;2-F
Abstract
This paper describes the cryogenic operation of partially depleted Sil icon-On-Insulator inverters. As is shown, the floating operation yield s a degradation of the transfer characteristics, which increases upon cooling. Additionally, at cryogenic temperatures, hysteresis effects, further deteriorate the performance. These observations will be discus sed in view of the cryogenic SOI MOSFET characteristics and anomalies. Finally, the impact of the so-called twin-gate configuration on the i mprovement of the inverter characteristics at low temperatures will be demonstrated and discussed.