F. Balestra et al., HOT-CARRIER EFFECTS IN SUB-0.1 MU-M GATE LENGTH MOSFETS BETWEEN ROOM AND LIQUID-HELIUM TEMPERATURES, Journal de physique. IV, 4(C6), 1994, pp. 75-80
The variations of the substrate current and the impact ionization rate
in MOS transistors are investigated as a function of channel length a
nd temperature. It is shown that, although a significant enhancement o
f hot carrier effects is observed by scaling down the devices, a stron
g reduction of the impact ionization rate is obtained for sub-0.1 mum
MOSFETs operated at liquid nitrogen temperature in the low drain volta
ge range. A thorough study of the electrical properties of these deep
submicron devices allows us to gain insight in the physical mechanisms
involved in the hot carrier transport in a wide temperature range.