ROOM AND LOW-TEMPERATURE ELECTRICAL MEASUREMENTS FOR THE INTERFACE CHARACTERIZATION OF TITANIUM DISILICIDES ON SILICON FROM MULTILAYER TITANIUM-SILICON STRUCTURES

The interface of titanium disilicides TiSi2 on silicon formed by elect ron gun evaporation of silicon/titanium multilayers and subsequent ann ealing is characterised using current-voltage measurements on speciall y prepared Schottky diodes in the whole temperature range from room te mperature down to 77K. In particular, the influence of the bilayer Si/ Ti thickness ratio, ranging between 2 and 3, on the barrier height of the diodes is studied and compared with the case of a diode formed by deposition of a single titanium layer and further annealing. The activ ation energies derived from the low temperature measurements have show n that the interface of the sample prepared with single layer depositi on is more rough than the case of the sample prepared with deposition of multilayers using a bilayer thickness ratio Si/Ti=2.5 which is clos e to the calculated value for the stoichiometric films.