NUMERICAL-SIMULATION OF SIGE HBTS AT CRYOGENIC TEMPERATURES

Authors
RICHEY DM CRESSLER JD JAEGER RC
Citation
Dm. Richey et al., NUMERICAL-SIMULATION OF SIGE HBTS AT CRYOGENIC TEMPERATURES, Journal de physique. IV, 4(C6), 1994, pp. 127-132
Citations number
19
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
4
Issue
C6
Year of publication
1994
Pages
127 - 132
Database
ISI
SICI code
1155-4339(1994)4:C6<127:NOSHAC>2.0.ZU;2-2
Abstract
This paper describes SCORPIO, a new one-dimensional, drift-diffusion s imulator for modeling silicon-germanium heterojunction bipolar transis tors (SiGe HBT's) over a wide temperature range (77-400K). SCORPIO wil l be used to investigate fundamental low-temperature device physics pr oblems and key device design issues. Comparisons of simulation results with experimental measurements are being used to ensure accurate mode l calibration.