MODELING HEAVY DOPING EFFECTS FOR LOW-TEMPERATURE DEVICE SIMULATIONS

A new temperature dependent apparent bandgap narrowing model, appropri ate for low temperature device simulations is proposed. The model is b ased on the decomposition of apparent bandgap narrowing in equilibrium into different contributions at 300K and on the theoretical temperatu re dependence of each phenomenon. Specific heavy doping effects that c an be important at low temperatures are discussed. Temperature depende nce of apparent bandgap narrowing in equilibrium is more significant a t high concentration of ionized impurities, where apparent bandgap nar rowing decreases with decreasing temperature, as a consequence of temp erature dependent degeneracy.