CORRELATION BETWEEN THE BAND-GAP OF SEMICONDUCTORS AND THERMAL-ACTIVATION PARAMETERS OF PLASTICITY

Two characteristic activation energies of the plasticity of semiconduc tors depend on the minimum band gap: the kink energy deduced from the lower yield point and the diffusion energy derived from the first reco very stage of stress-strain curves. There is a clear distinction betwe en the elemental semiconductors Si and Ge and the III-V compounds. In addition, both activation energies are correlated only differing by a constant factor. The results corroborate a former conclusion, that an elementary diffusion step might be involved in the process of kink for mation and migration.