PLANAR-TYPE BA1-XKXBIO3 JOSEPHSON TUNNEL-JUNCTIONS PREPARED ON SRTIO3BICRYSTAL SUBSTRATES

Citation
M. Inoue et al., PLANAR-TYPE BA1-XKXBIO3 JOSEPHSON TUNNEL-JUNCTIONS PREPARED ON SRTIO3BICRYSTAL SUBSTRATES, Applied physics letters, 65(2), 1994, pp. 243-245
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
65
Issue
2
Year of publication
1994
Pages
243 - 245
Database
ISI
SICI code
0003-6951(1994)65:2<243:PBJTPO>2.0.ZU;2-V
Abstract
We have prepared planar-type Josephson junctions using Ba1-xKxBiO3 thi n films deposited on SrTiO3 bicrystal substrates by the rf magnetron s puttering method, and investigated their properties. The current-volta ge characteristics of the junctions were those of superconductor-insul ator-superconductor junctions and both the Josephson current and the e nergy gap were observed clearly. The critical current density of the j unction was 5.5X10(2) A/cm2 at 4.2 K and the I(c)R(n) product was 2.2 mV. A magnetic field applied perpendicular to the substrate modulated the critical current, which gave a clear Fraunhofer pattern.