GROWTH AND BAND-GAP OF STRAINED (110) SI1-XGEX LAYERS ON SILICON SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION

Authors
LIU CW STURM JC LACROIX YRJ THEWALT MLW PEROVIC DD
Citation
Cw. Liu et al., GROWTH AND BAND-GAP OF STRAINED (110) SI1-XGEX LAYERS ON SILICON SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 65(1), 1994, pp. 76-78
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
1
Year of publication
1994
Pages
76 - 78
Database
ISI
SICI code
0003-6951(1994)65:1<76:GABOS(>2.0.ZU;2-U
Abstract
We report chemical vapor deposition growth of strained Si1-xGex alloy layers on [110] Si substrates. Compared to the same growth conditions on [100] substrates, a slightly lower Ge composition and a much lower growth rate was observed. From photoluminescence measurements, the ban d gap of these films for 0.16 less-than-or-equal-to x less-than-or-equ al-to 0.43 is evaluated and compared to theory. Finally, a surprisingl y large ''no-phonon'' replica line strength ratio was observed as comp ared with-that observed in [100] layers.