Terahertz pulse emission from four different delta-doped molecular bea
m epitaxially grown GaAs samples is studied. We observe a decrease of
the emitted THz pulse amplitude as the distance of the delta-doped lay
er from the surface is increased, and a change in polarity of the THz
pulses as compared to bulk n-type doped GaAs reference samples. The el
ectric fields in the region of the doping layer are investigated by ph
otoreflectance spectroscopy. A careful analysis of Franz-Keldysh oscil
lations observed in the photoreflectance spectra provides information
about the built-in fields on both sides of the delta-doped layer.