INTERPRETATION OF THE LUMINESCENCE QUENCHING IN CHEMICALLY ETCHED POROUS SILICON BY THE DESORPTION OF SIH3 SPECIES

Authors
ZOUBIR NH VERGNAT M DELATOUR T BURNEAU A DEDONATO P
Citation
Nh. Zoubir et al., INTERPRETATION OF THE LUMINESCENCE QUENCHING IN CHEMICALLY ETCHED POROUS SILICON BY THE DESORPTION OF SIH3 SPECIES, Applied physics letters, 65(1), 1994, pp. 82-84
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
1
Year of publication
1994
Pages
82 - 84
Database
ISI
SICI code
0003-6951(1994)65:1<82:IOTLQI>2.0.ZU;2-Y
Abstract
The effect of thermal annealing on chemically etched porous silicon wa s studied by combined photoluminescence, infrared spectrometry, and th ermal-desorption spectrometry experiments. The results show that the r elease of SiH3 and SiF3 entities is a first step in the photoluminesce nce degradation in porous silicon. These entities desorb before molecu lar hydrogen.