TRANSPARENT CONDUCTING THIN-FILMS OF GAINO3

GaInO3 is recently identified transparent conducting material which is structurally and chemically distinct from indium tin oxide [R. J. Cav a, J. M. Phillips, J. Kwo, G. A. Thomas, R. B. van Dover, S. A. Carter , J. J. Krajewski, W. F. Peck, Jr., J. H. Marshall, and D. H. Rapkine, Appl. Phys. Lett. 64, 2071 (1994)]. We have used both dc reactive spu ttering in the on- and off-axis geometries and pulsed laser deposition to grow films of this material. Layers of pure GaInO3 as well as thos e partially substituted with Ge for Ga or Sn for In have been studied. Both growth techniques are capable of producing films with conductivi ty approximately 400 (OMEGA cm)-1 and transmission as high as 90% thro ughout the visible spectrum for approximately 1-mum-thick films. The g rowth techniques differ in the morphology of the films produced as wel l as in the degree of dopant incorporation that can be achieved. A pos t-growth anneal in H-2 can help produce an optimized oxygen content an d a reduction of resistivity. Hall measurements indicate a carrier con centration up to 4 X 10(20) cm-3 for all films and a Hall mobility up to 10 cm2/(V s). Doping appears to be due both to oxygen vacancies and aliovalent ion substitution.