A NEW 3RD-LEVEL CHARGE-PUMPING METHOD FOR ACCURATE DETERMINATION OF INTERFACE-TRAP PARAMETERS IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS

We propose a new implementation of the third-level charge pumping tech nique for a precise determination of the energy distributions of elect ron and hole cross sections and interface state density in metal-oxide -semiconductor field-effect transistors (MOSFETs). Using an arbitrary function generator with a high clock rate and a sufficient storage mem ory length, it is possible to evaluate interface trap emission times a nd interface state densities in small geometry MOSFETs with a high-ene rgy resolution. The accuracy of the technique has been greatly increas ed owing to the high stability and the weak distortion of the signal a pplied to the gate of the device (numerically generating via a high-sp eed digital-to-analog converter) and the development of a new acquisit ion procedure. To illustrate the performance of this method, we presen t the first results concerning the characterization of 0.6 mum N-chann el MOSFETs.