DEPOSITION AND PIEZOELECTRIC CHARACTERISTICS OF ZNO FILMS BY USING ANECR SPUTTERING SYSTEM

Citation
M. Kadota et al., DEPOSITION AND PIEZOELECTRIC CHARACTERISTICS OF ZNO FILMS BY USING ANECR SPUTTERING SYSTEM, IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 41(4), 1994, pp. 479-483
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic",Acoustics
ISSN journal
08853010
Volume
41
Issue
4
Year of publication
1994
Pages
479 - 483
Database
ISI
SICI code
0885-3010(1994)41:4<479:DAPCOZ>2.0.ZU;2-6
Abstract
Piezoelectric properties of ZnO films, were investigated by using an E lectron Cyclotron Resonance (ECR) sputtering system. It was confirmed that this system was capable of depositing a ZnO film with a large spe cific resistance, and good c-axis orientation on an interdigital trans ducer (IDT)/glass substrate at a low temperature (less than 200-degree s-C) and in a low gas pressure (approximately 10(-4) torr). Furthermor e these ZnO films exhibited excellent SAW characteristics (insertion l osses) and effective electromechanical coupling factors (k(eff)) compa red with ZnO films deposited by a conventional RF magnetron sputtering system. Further, this ECR sputtering system was capable of depositing a ZnO film, without heating the substrate, that was capable of propag ating a Rayleigh SAW at 700 MHz for the first time.