LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPIC STUDIES OF DEFECTS IN SEMICONDUCTORS

A quantitative improvement in deep-level transient spectroscopy (DLTS) resolution has been demonstrated by using Laplace transform method fo r the emission rate analysis. Numerous tests performed on the software used for the calculations as well as on the experimental setup clearl y demonstrated that in this way the resolution of the method can be in creased by more than an order of magnitude. Considerable confidence in this approach was gained through measurements of a selection of well- characterized point defects in various semiconductors. The results for platinum in silicon and EL2 in GaAs are presented. For each of these cases conventional DLTS give broad featureless lines, while Laplace DL TS reveals a fine structure in the emission process producing the spec tra.