SCHOTTKY-BARRIER HEIGHT DEPENDENCE ON THE COMPENSATION DOPING IN THE INTERFACIAL SI LAYER OF AL SI/N-GAAS SCHOTTKY DIODES/

Al/Si/n:GaAs Schottky diode structures have been grown by molecular-be am epitaxy utilizing thin (100 angstrom) Si interfacial layers. These Si layers are unintentionally very heavily n-type doped with As from t he system or from the substrate. This n-type doping is intentionally c ompensated with p-type (Al) doping during the growth of the Si layer i n an attempt to modulate the Schottky barrier height. The resultant ba rrier height, as determined by I-V and C-V measurements, increases wit h increased acceptor doping in the Si (from 0.34 eV for no Al doping t o a maximum of 1.07 eV) as per Poisson's equation.