Rl. Vanmeirhaeghe et al., INFLUENCE OF DEFECT PASSIVATION BY HYDROGEN ON THE SCHOTTKY-BARRIER HEIGHT OF GAAS AND INP CONTACTS, Journal of applied physics, 76(1), 1994, pp. 403-406
The change in barrier height caused by sputter metallization of contac
ts on both GaAs and InP substrates, and using evaporated contacts as a
reference, is investigated. It has been found that by annealing, the
reference barrier height can be restored. A model is proposed, wherein
sputter metallization leads to passivation of interfacial defects by
hydrogen. Accordingly, the Fermi level pinning caused by these defects
is removed and the barrier height changes and is determined by other
mechanisms. Annealing produces a removal of hydrogen and reactivates t
he amphoteric defects. Additional evidence is given for the assumption
that sputter metallization leads to passivation, by hydrogen, of dopa
nts and defects in the semiconductor.