MODELING OF INGAAS INALAS COUPLED DOUBLE-QUANTUM WELLS/

Authors
Citation
Mk. Chin, MODELING OF INGAAS INALAS COUPLED DOUBLE-QUANTUM WELLS/, Journal of applied physics, 76(1), 1994, pp. 518-523
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
76
Issue
1
Year of publication
1994
Pages
518 - 523
Database
ISI
SICI code
0021-8979(1994)76:1<518:MOIICD>2.0.ZU;2-K
Abstract
A symmetric coupled double-quantum-well (CDQW) structure in InGaAs/InA lAs lattice matched to InP can give enhanced Stark effects for electro absorption modulation near 1.3 mum. The optical features of this mater ial are the dramatic quenching of the heavy-hole exciton and the simul taneous emergence of the normally forbidden higher-order transitions. An effective-mass model for the double-quantum-well structure yields p redictions in good agreement with experimental results. The model can be used to predict the optical properties of not only symmetric CDQWs but also asymmetric structures as well.