TRAP GENERATION AT SI SIO2 INTERFACE IN SUBMICROMETER METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY 4.9 EV ULTRAVIOLET-IRRADIATION/

Subfemtofarad changes are reported in the gate-to-drain capacitance of submicrometer metal-oxide-semiconductor transistors subjected to 4.9 eV (253.7 nm) ultraviolet irradiation. The observation is attributed t o trap generation at S/SiO2 interface, proposed to be due to the break ing of Si-H bonds.