ORIGIN OF N-TYPE CONDUCTIVITY OF LOW-TEMPERATURE-GROWN INP

Authors
CHEN WM DRESZER P PRASAD A KURPIEWSKI A WALUKIEWICZ W WEBER ER SORMAN E MONEMAR B LIANG BW TU CW
Citation
Wm. Chen et al., ORIGIN OF N-TYPE CONDUCTIVITY OF LOW-TEMPERATURE-GROWN INP, Journal of applied physics, 76(1), 1994, pp. 600-602
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
76
Issue
1
Year of publication
1994
Pages
600 - 602
Database
ISI
SICI code
0021-8979(1994)76:1<600:OONCOL>2.0.ZU;2-5
Abstract
It is shown with correlated magnetic resonance and electrical measurem ents that the P(In) antisite is the prevailing defect in InP grown by molecular-beam epitaxy at low temperature. The first ionization level of the P(In) antisite is resonant with the conduction band, which make s the material n-type conducting due to autoionization of the P(In) an tisite.