Vi. Polyakov et al., OPTICAL AND ELECTRICAL-PROPERTIES OF METAL-DIAMOND-LIKE ATOMIC-SCALE COMPOSITE (DLASC) FILMS AND DLASC SI HETEROSTRUCTURES/, Thin solid films, 292(1-2), 1997, pp. 91-95
Diamond-like atomic-scale composite (DLASC) films deposited on (100) S
i were studied by means of charge deep-level transient spectroscopy (Q
-DLTS) and ellipsometry. Two peaks in the continuous spectrum of trapp
ing centers were discriminated by the Q-DLTS technique: from the cente
rs localized on the film-Si interface and from the centers localized i
n the film. The dependence of their parameters an deposition condition
s, thermal and radiation treatment was established. The Q-DLTS results
correlate well with that obtained by positron annihilation spectrosco
py.