A COMPARATIVE-STUDY ON THE PROPERTIES OF TIN FILMS PREPARED BY CHEMICAL-VAPOR-DEPOSITION ENHANCED BY RF PLASMA AND BY ELECTRON-CYCLOTRON-RESONANCE PLASMA

TiN thin films were prepared by both r.f. plasma enhanced chemical vap or deposition (r.f.-PECVD) and electron cyclotron resonance plasma enh anced chemical vapor deposition (ECR-PECVD) using TiCl4, N-2 and H-2 a s the reactants at various deposition temperatures. The effects of dep osition temperature on the compositional ratio [N]/[Ti], impurity cont ent, crystallinity, lattice parameter, grain size, deposition rate, re sistivity and step coverage were studied. TiN films prepared by ECR-PE CVD were highly crystallized at a low temperature of 350 degrees C, wh ile TiN films prepared by r.f.-PECVD began to show obvious crystallini ty above 500 degrees C. TiN films deposited by ECR-PECVD at lower temp eratures had lower impurity contents and lower resistivity than those deposited by r.f.-PECVD.