CHARACTERISTICS OF NI N-AGINSE2 POLYCRYSTALLINE THIN-FILM SCHOTTKY-BARRIER DIODES/

Authors
RAMESH PP UTHANNA S NAIDU BS REDDY PJ
Citation
Pp. Ramesh et al., CHARACTERISTICS OF NI N-AGINSE2 POLYCRYSTALLINE THIN-FILM SCHOTTKY-BARRIER DIODES/, Thin solid films, 292(1-2), 1997, pp. 290-292
Citations number
16
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
292
Issue
1-2
Year of publication
1997
Pages
290 - 292
Database
ISI
SICI code
0040-6090(1997)292:1-2<290:CONNPT>2.0.ZU;2-G
Abstract
Ni/n-AgInSe2 polycrystalline thin film Schottky barrier diodes have be en prepared. The current-voltage, capacitance-voltage and photo-respon se have been investigated. Various important physical parameters of th ese diodes were derived from these measurements.