HOW GALLIUM-ARSENIDE WAFERS ARE MADE

Authors
KITSUNAI M YUKI T
Citation
M. Kitsunai et T. Yuki, HOW GALLIUM-ARSENIDE WAFERS ARE MADE, Applied organometallic chemistry, 8(3), 1994, pp. 167-174
Citations number
11
Categorie Soggetti
Chemistry Applied","Chemistry Inorganic & Nuclear
Journal title
Applied organometallic chemistry → ACNP
ISSN journal
02682605
Volume
8
Issue
3
Year of publication
1994
Pages
167 - 174
Database
ISI
SICI code
0268-2605(1994)8:3<167:HGWAM>2.0.ZU;2-P
Abstract
Ten Japanese gallium arsenide wafer manufacturers voluntarily formed T he Japan Manufacturers' Society of Compound Semiconductor Materials (J AMS-CS) in 1983. This report summarizes the theories, the systems, and the operations of gallium arsenide production: the gradient freeze (G F) method, the liquiden-capsulated Czochralski (LEC) method, the wafer processing, the vapor-phase epitaxial (VPE) growth method, the liquid -phase epitaxial (LPE) growth method, the metalorganic chemical vapor deposition (MO-CVD) method and the molecular beam epitaxial (MBE) meth od.