RAMAN-STUDY OF GALLIUM-ARSENIDE THIN-FILMS

The influence of deposition parameters on the structure of the gallium arsenide thin films was investigate Raman scattering. The study was b ased on the analysis of the first-order Raman spectra which allows for a differentiation between the amorphous component and crystallites of various sizes. The amorphous and crystalline volume fractions were ca lculated from the integrated intensities of the deconvoluted peaks. It was demonstrated that a transition occurs from mu-GaAs to a-GaAs for particular plasma conditions and substrate temperature. As a function of the deposition parameters the entire range from mostly microcrystal line to completely amorphous films can be obtained. These properties w ere consistent with the results obtained on the same samples by transm ission high-energy electron diffraction and conventional transmission electron microscopy.