DENSITY OF VAPOR-DEPOSITED AMORPHOUS-GE FILMS

Authors
KHAWAJA EE DURRANI SMA HALLAK AB HUSSAIN MS
Citation
Ee. Khawaja et al., DENSITY OF VAPOR-DEPOSITED AMORPHOUS-GE FILMS, Journal of non-crystalline solids, 170(3), 1994, pp. 308-311
Citations number
20
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
170
Issue
3
Year of publication
1994
Pages
308 - 311
Database
ISI
SICI code
0022-3093(1994)170:3<308:DOVAF>2.0.ZU;2-X
Abstract
The density of vapor-deposited amorphous Ge films (a-Ge) was determine d by spectrophotometry combined with Rutherford backscattering spectro scopy. It was found to be 0.99 +/- 3% of the bulk value for crystallin e Ge (c-Ge). This density is in agreement with the Lorentz-Lorenz law which, based upon the existing infrared data on the index of refractio n of a-Ge, suggests that the density of a-Ge should be close (within 4 %) to that of c-Ge.