CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING/

Authors
JIN SX YUAN MH WANG LP SONG HZ WANG HP QIN GG
Citation
Sx. Jin et al., CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING/, Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences, 37(6), 1994, pp. 730-737
Citations number
19
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences → ACNP
ISSN journal
10016511
Volume
37
Issue
6
Year of publication
1994
Pages
730 - 737
Database
ISI
SICI code
1001-6511(1994)37:6<730:CTSHOT>2.0.ZU;2-S
Abstract
Hydrogen can decrease the Schottky barrier height (SBH) of Ti/n diodes as much as 0.18 eV. Zero bias annealing (ZBA) makes the SBHs of Ti/n- GaAs diodes containing hydrogen decrease and reverse bias annealing (R BA) makes them increase. When RBA at 100-degrees-C lasts for 2 h or mo re, the SBHs haw a one-to-one correlation with the biases of RBA and t he larger the bias applied, the higher the SBH is.