Sx. Jin et al., CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING/, Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences, 37(6), 1994, pp. 730-737
Hydrogen can decrease the Schottky barrier height (SBH) of Ti/n diodes
as much as 0.18 eV. Zero bias annealing (ZBA) makes the SBHs of Ti/n-
GaAs diodes containing hydrogen decrease and reverse bias annealing (R
BA) makes them increase. When RBA at 100-degrees-C lasts for 2 h or mo
re, the SBHs haw a one-to-one correlation with the biases of RBA and t
he larger the bias applied, the higher the SBH is.