Ea. Ponomarev et Sd. Babenko, THEORETICAL-ANALYSIS OF THE LASER-INDUCED PHOTOTRANSIENT RESPONSE OF SEMICONDUCTOR ELECTROLYTE CIRCUITS WITH CURRENT-DOUBLING REACTIONS, Journal of electroanalytical chemistry [1992], 371(1-2), 1994, pp. 27-35
A model describing the phototransient response of a semiconductor \ el
ectrolyte junction to a short laser pulse in case of ''current-doublin
g'' reactions is proposed. The rate constants of a charge transfer acr
oss the Helmholtz layer, the recombination of carriers and injection o
f majority carriers from intermediates in the solution back to the sem
iconductor are introduced in this model. The analysis is restricted by
consideration of a low intensity pulse which enables perturbation cau
sed by illumination to be neglected, and second-order processes such a
s the capture of the second minority carrier by the reactive intermedi
ate which can take place under strong light illumination can be ignore
d. A general equation describing the phototransient response in the fr
ame of a simple linear model is obtained, and different cases in photo
potential and photocurrent measurements are considered. Analysis of ph
ototransient data in the case of current-doubling reactions allows the
rate constants of charge transfer at the semiconductor \ electrolyte
interface to be estimated directly.