OPTOELECTRONIC EXCLUSIVE-NOR GATE OPERATING AT 200 MBIT S/

Authors
SHE TC SHU C
Citation
Tc. She et C. Shu, OPTOELECTRONIC EXCLUSIVE-NOR GATE OPERATING AT 200 MBIT S/, IEEE photonics technology letters, 6(6), 1994, pp. 712-714
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
6
Year of publication
1994
Pages
712 - 714
Database
ISI
SICI code
1041-1135(1994)6:6<712:OEGOA2>2.0.ZU;2-E
Abstract
An optoelectronic exclusive-NOR gate was demonstrated for the first ti me. The device consisted of a composite pair of GaAs metal-semiconduct or- metal photodetectors. Special input pulse trains were constructed from a 0.83 mum laser diode to test its functionality. Output electric al signal shorter than 800 ps was achieved. On-off contrast ratio of 6 .2 dB was obtained with an incident pulse energy below 100 fJ. The dev ice is useful in bit pattern matching for optical signal processing an d optical computing.