DIAMOND SYNTHESIS AT LOW-TEMPERATURES

Diamond growth at room temperature [i.e., on unheated monocrystalline silicon (111) substrates], has been demonstrated by the laser irradiat ion of CO/H-2 gas mixtures at low pressures. The CO is photodissociate d by a multiphoton process using 193 nm radiation from an excimer lase r. This process, referred to as laser chemical vapor deposition (LCVD) , is distinct from the laser-excited CVD (LECVD) process described in an earlier publication. Although no quantitative measurements have yet been made on the gas-phase species compositions in LCVD, the growth o f diamond particles at room temperature marks a beginning to enabling diamond deposition on materials with low melting temperatures.