The room temperature oxidation of a tin metal foil up to O2 exposures
of 8 x 10(11) L (1 L = 10(-6) Torr.s) has been studied by synchrotron
radiation photoemission spectroscopy. Valence band (VB) and Sn4d core
level energy distribution curves (EDC) have been measured at photon en
ergies of 50 and 90 eV. It resulted that the oxide film formed on tin
after oxygen chemisorbtion contained Sn2+ and Sn4+ with relative conce
ntrations determined by the stage of the oxidation. The VB, that at 50
0 L of O2 had the characteristic profile of the SnO VB, showed at high
er exposures the appearance of spectral features due to SnO2. The anal
ysis of the Sn4d core levels allowed us to identify the presence of a
chemical shift of 0.73 +/- 0.05 eV between the Sn4+ and Sn2+ peaks. In
fact the curves obtained by subtracting the metallic contribution due
to the substrate from the Sn 4d peaks measured at increasing O2 expos
ure, appeared progressively shifted towards higher binding energies, b
ecause of the change in the composition of the oxide layer. Best fit c
urves of the previous peaks, deconvoluted using doublets of Gaussians
for the Sn2+ and Sn4+ 4d3/2 and 4d5/2 spin orbit components, were used
to evaluate the concentration of the two phases. Only the Sn2+ compon
ent was found by the fitting program in the peak observed at 500 L, wh
ereas increasing concentrations of Sn4+ (up to 71% at 8 x 10(11) L) sh
owed up at heavier oxidation. Photoemission spectra, taken at differen
t depths in the oxide layer, etched by low energy (200 eV) Ar+ sputter
ing, showed the presence of a composition gradient; SnO2 being an over
layer lying above a film containing mostly SnO. The thickness of the o
xide film present on the tin foil dosed with 8 x 10(11) L of oxygen wa
s evaluated to be about 17 angstrom.