A study of the variation in the calculated quantities for adatom diffu
sion with respect to the size of the model crystal is presented. The r
eported quantities include surface diffusion barrier heights, pre-expo
nential factors, and dynamical correction factors. Embedded atom metho
d (EAM) potentials were used throughout this effort. Both the layer si
ze and the depth of the crystal were found to influence the values of
the Arrhenius factors significantly. In particular, exchange type mech
anisms required a significantly larger model than standard hopping mec
hanisms to determine adatom diffusion barriers of equivalent accuracy.
The dynamical events that govern the corrections to transition state
theory (TST) did not appear to be as sensitive to crystal depth. Suita
ble criteria for the convergence of the diffusion parameters with rega
rd to the rate properties are illustrated.